A wear-resistant composite coatingXINMING HUANG; ZONGGANG DENG.Plating and surface finishing. 1993, Vol 80, Num 2, pp 62-65, issn 0360-3164Article

Reduced-order modeling of dynamic heat release for thermoacoustic instability predictionXINMING HUANG; BAUMANN, William T.Combustion science and technology. 2007, Vol 179, Num 1-3, pp 617-636, issn 0010-2202, 20 p.Article

Analysis of the reaction at the interface between Si melt and Ba-doped silica glassXINMING HUANG; HOSHIKAWA, Takeshi; UDA, Satoshi et al.Journal of crystal growth. 2007, Vol 306, Num 2, pp 422-427, issn 0022-0248, 6 p.Article

Relationship between incongruent-melting langatate (La₃Ta_0.5Ga_5.5O₁₄) and associated phases in the system La₂O₃-Ga₂O₃-Ta₂O₅KIMURA, Hiromitsu; UDA, Satoshi; XINMING HUANG et al.Journal of crystal growth. 2006, Vol 295, Num 1, pp 36-43, issn 0022-0248, 8 p.Article

Segregation of Ga during growth of Si single crystalHOSHIKAWA, Takeshi; XINMING HUANG; UDA, Satoshi et al.Journal of crystal growth. 2006, Vol 290, Num 2, pp 338-340, issn 0022-0248, 3 p.Article

System Architecture and Implementation of MIMO Sphere Decoders on FPGA : Configurable Computing Design-II: Hardware Level ReconfigurationXINMING HUANG; CAO LIANG; JING MA et al.IEEE transactions on very large scale integration (VLSI) systems. 2008, Vol 16, Num 2, pp 188-197, issn 1063-8210, 10 p.Article

Effect of antimony-doping on the oxygen segregation coefficient in silicon crystal growthXINMING HUANG; TERASHIMA, K; IZUNOME, K et al.Journal of crystal growth. 1995, Vol 149, Num 1-2, pp 59-63, issn 0022-0248Article

Evaluation of evaporated species from silicon melt surface during Sb-doped Czochralski silicon crystal growthIZUNOME, K; XINMING HUANG; TERASHIMA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 12B, pp L1635-L1637, issn 0021-4922, 2Article

Effects of TiC/TiN addition on the microstructure and mechanical properties of ultra- fine grade Ti (C, N)-Ni cermetsNING LIU; SHENG CHAO; XINMING HUANG et al.Journal of the European Ceramic Society. 2006, Vol 26, Num 16, pp 3861-3870, issn 0955-2219, 10 p.Article

Transformation of the incongruent-melting state to the congruent-melting state via an external electric field for the growth of langasiteUDA, Satoshi; XINMING HUANG; KOH, Shinji et al.Journal of crystal growth. 2005, Vol 281, Num 2-4, pp 481-491, issn 0022-0248, 11 p.Article

Dislocation-free Czochralski Si crystal growth without a thin neck: dislocation behavior due to incomplete seedingTOSHINORI TAISHI; XINMING HUANG; YONENAGA, Ichiro et al.Journal of crystal growth. 2003, Vol 258, Num 1-2, pp 58-64, issn 0022-0248, 7 p.Article

Effect of an external electric field on the crystal growth process of YBCO superconductive oxideXINMING HUANG; UDA, Satoshi; KOH, Shinji et al.Journal of crystal growth. 2007, Vol 307, Num 2, pp 432-439, issn 0022-0248, 8 p.Article

Partitioning of ionic species and crystallization electromotive force during the melt growth of LiNbO₃ and Li₂B₄O₇KOH, Shinji; UDA, Satoshi; XINMING HUANG et al.Journal of crystal growth. 2007, Vol 306, Num 2, pp 406-412, issn 0022-0248, 7 p.Article

In situ observation of crystal growth process of YBCO superconductive oxide with an external electric fieldXINMING HUANG; UDA, Satoshi; XIN YAO et al.Journal of crystal growth. 2006, Vol 294, Num 2, pp 420-426, issn 0022-0248, 7 p.Article

Study of the mechanism of crystallization electromotive force during growth of congruent LiNbO₃ using a micro-pulling-down methodKOH, Shinji; UDA, Satoshi; NISHIDA, Masahiro et al.Journal of crystal growth. 2006, Vol 297, Num 1, pp 247-258, issn 0022-0248, 12 p.Article

Chemical reaction of Sb atoms in Si meltXINMING HUANG; TERASHIMA, K; IZUNOME, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 3, pp 1502-1503, issn 0021-4922, 1Article

Influencing factors on the formation of the low minority carrier lifetime zone at the bottom of seed-assisted cast ingotsGENXIANG ZHONG; QINGHUA YU; XINMING HUANG et al.Journal of crystal growth. 2014, Vol 402, pp 65-70, issn 0022-0248, 6 p.Article

The electric field-induced transformation of the melting state of langasite from incongruent into congruentUDA, Satoshi; KOH, Shinji; XINMING HUANG et al.Journal of crystal growth. 2006, Vol 292, Num 1, pp 1-4, issn 0022-0248, 4 p.Article

Design and Implementation of a Low-Complexity Symbol Detector for Sparse ChannelsYANJIE PENG; XINMING HUANG; KLEIN, Andrew G et al.IEEE transactions on very large scale integration (VLSI) systems. 2013, Vol 21, Num 8, pp 1506-1515, issn 1063-8210, 10 p.Article

Local design of the hot-zone in an industrial seeded directional solidification furnace for quasi-single crystalline silicon ingotsQINGHUA YU; LIJUN LIU; WENCHENG MA et al.Journal of crystal growth. 2012, Vol 358, pp 5-11, issn 0022-0248, 7 p.Article

The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski methodKIMURA, Hiromitsu; UDA, Satoshi; BUZANOV, Oleg et al.Journal of electroceramics. 2008, Vol 20, Num 2, pp 73-80, issn 1385-3449, 8 p.Article

Surface tension variation of molten silicon measured by the ring methodSASAKI, H; ANZAI, Y; XINMING HUANG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2A, pp 414-418, issn 0021-4922, 1Article

A design of crucible susceptor for the seeds preservation during a seeded directional solidification processCHANGLIN DING; MEILING HUANG; GENXIANG ZHONG et al.Journal of crystal growth. 2014, Vol 387, pp 73-80, issn 0022-0248, 8 p.Article

Capacity Bounds of MIMO Channels with Asymmetric Channel State Information at TransmitterAN LIU; XINMING HUANG; YOUJIAN LIU et al.IEEE communications letters. 2009, Vol 13, Num 8, pp 564-566, issn 1089-7798, 3 p.Article

Control of oxygen concentration in heavily antimony-doped Czochralski Si crystals by ambient argon pressureIZUNOME, K; XINMING HUANG; TOGAWA, S et al.Journal of crystal growth. 1995, Vol 151, Num 3-4, pp 291-294, issn 0022-0248Article